silicon plastic power transistor npn 2SD313 3a 30w technical data ?esigned for low frequency power amplifier. f collector-emitter voltage: v ceo =60v f dc current gain: 40 @ i c =2a f to-220 package maximum ratings rating symbol value unit collector- emitter voltage v ceo 60 vdc collector ?base voltage v cb 60 vdc emitter base voltage v eb 5 vdc collector current ?continuos i c 3 adc base current i b 0.3 adc total power dissipation @ tc = 25 c derate above 25 c pd 30 0.24 watts w/ c operating and storage junction temperature range tj,tstg -55 to +150 c thermal characteristics characteristic symbol max. unit thermal resistance junction to case r thjc 4.16 c/w
electrical characteristics : [ tc = 25 c unless otherwise noted ] characteristic symbol min typ max unit * off characteristics : collector?mitter breakdown voltage [ ic =50 madc, i b = 0 ] v ceo(sus) 60 vdc collector cutoff current [ v cb =20 vdc, i b = 0 ] i cb0 100 adc collector?ase breakdown voltage [ ic =1madc, i e = 0 ] bv cbo 60 vdc emitter cutoff current [v eb =5vdc, ic=0] i ebo 100 adc * on characteristics (1): dc current gain [ ic = 0.1 adc , v ce = 2.0 vdc ] [ ic =2 adc , v ce =2.0 vdc ] h fe 40 40 320 collector-emitter saturation voltage [ ic = 2adc , i b = 0.2adc ) v ce(sat) 1 vdc emitter?ase saturation voltage [ ic =1adc, v ce =2v ] v be(on) 1 vdc dynamic characteristics : current gain ?bandwidth product [ic=0.5adc,v ce =5vdc,ftest=1.0 mhz ] f t 8 mhz (1) pulse test : pulse width <300 m s , duty cycle < 2.0%
|
